EFFECT OF THIN LAYERS OF CdTe AND ZnTe ON THE SHAPE OF GaAs SUBSTRATES
A. R. Novoselov1, N. N. Mikhailov2, R. V. Menshchikov2, P. A. Aldokhin1, A. E. Matochkin3
1Novosibirsk Branch of the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, “Technological Design Institute of Applied Microelectronics,”, Novosibirsk, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: GaAs, CdTe, ZnTe, instrument plates, a photodetectors of IR radiation
Abstract
The influence of the formation of thin layers CdTe and ZnTe on the planar side on the shape of GaAs instrument plates has been clarified. In the formation of thin buffer layers of ZnTe (20-300 nm thick) and CdTe (5-7 µm thick), their bending is found to increase by more than 1 µm. A technological solution has been found to reduce the bending of GaAs instrument plates by more than 1 µm after the formation of thin layers (CdTe and ZnTe). After technological annealing at a temperature of 600 °C in high vacuum, the sample slowly cools down (at a rate of 0.5 deg/min) within 11 hours.
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