CORRUGATED SEMICONDUCTOR NANOMEMBRANES BASED ON STRAINED HETEROSTRUCTURES: FABRICATION AND MAGNETOTRANSPORT
a:2:{s:4:"TYPE";s:4:"TEXT";s:4:"TEXT";s:83:"V. A. Seleznev, S. V. Golod, A. B. Vorob’ev, E. V. Kozik, A. V. Prinz, V. Ya. Prinz";}
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: SiGe/Si nanomembrane, corrugation, three-dimensional micro- and nanoshells, magnetotransport
Abstract
The manuscript considers fundamental research in the field of nanomechanics of corrugated semiconductor nanomembranes composed of strained heterostructures. The results of a study of the magnetotransport of a two-dimensional electron gas in a corrugated nanomembrane made of a GaAs/InGaAs heterofilm are presented.
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