CORRUGATED SEMICONDUCTOR NANOMEMBRANES BASED ON STRAINED HETEROSTRUCTURES: FABRICATION AND MAGNETOTRANSPORT
V. A. Seleznev, S. V. Golod, A. B. Vorob’ev, E. V. Kozik, A. V. Prinz, V. Ya. Prinz
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: SiGe/Si nanomembrane, corrugation, three-dimensional micro- and nanoshells, magnetotransport
Abstract
The manuscript considers fundamental research in the field of nanomechanics of corrugated semiconductor nanomembranes composed of strained heterostructures. The results of a study of the magnetotransport of a two-dimensional electron gas in a corrugated nanomembrane made of a GaAs/InGaAs heterofilm are presented.
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