VERTICALLY ALIGNED CARBON NANOTUBES GROWN ON HAFNIUM OXIDE: STRUCTURE AND PROPERTIES
D. V. Shcheglov, S. V. Rodyakin, D. A. Nasimov, N. N. Kurus, A. S. Borovik, V. A. Seleznev, L. I. Fedina, D. I. Rogilo, O. I. Semenova, A.V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: carbon nanotubes, growth, hafnium oxide
Abstract
Using the catalytic chemical vapor deposition method, VACNT arrays with a height of 25 to 100 μm and a resistivity of 1.5 to 4 Ohm ⋅ cm have been grown for the first time on a Si/HfO2/Fe surface. The growth of VACNTs on hafnium oxide is observed in the temperature range T = 625-725°C, but is not realized at T ≥ 750 °C. In this case, the temperature dependence of the VACNT growth rate is characterized by a value of ~1.5 eV. Using high-resolution scanning electron microscopy and Raman spectroscopy, the dominant presence of nanotubes with diameters from 1 to 10 nm in the array is shown. It is found that nanocrystallization of HfO2 during annealing of substrates complicates the SEM analysis of catalytic Fe particles whose size on the surface of the initial amorphous HfO2 is 2-5 nm.
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