MOLECULAR BEAM EPITAXY OF GERMANIUM ON Si (001) FOR PHOTODETECTORS IN THE SPECTRAL RANGE FROM 1.3 TO 1.55 ОњM
K. B. Fritzler1, A. S. Deryabin1, I. D. Loshkarev1, A. I. Nikiforov1, I. B. Chistokhin1, A. V. Kolesnikov1, A. P. Vasilenko1, O. P. Pchelyakov1, L. V. Sokolov1, K. E. Pevchikh2, V. V. Svetikov2, A. K. Gutakovskii1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Joint Stock Company "Zelenograd Nanotechnology Center", Moscow, Russia
Keywords: molecular beam epitaxy, photodetectors, Ge-on-Si epitaxial layers, threading dislocations
Abstract
Photosensitive germanium layers on a silicon substrate have been formed by molecular beam epitaxy. The structural, optical and photovoltaic characteristics of the films have been investigated. The data obtained confirm the possibility of utilizing the developed Ge-on-Si heterostructures for the fabrication of photodetectors in the spectral range of 1.3-1.55 μm.
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