CLEAVAGE OF SOLID FILMS OF SUBMICRON THICKNESS AS A METHOD FOR PREPARING CROSS SECTIONS OF HETEROSTRUCTURES FOR HIGH-RESOLUTION TRANSMISSION MICROSCOPY
A. B. Vorob'ev, A. K. Gutakovskii, V. Ya. Prinz
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: transmission electron microscopy (TEM), atomic resolution, free-standing thin film, cross section, brittle crack, cleavage
Abstract
A preparation method is described in detail, which allows one to obtain defect-free cross sections of heterostructures for transmission electron microscopy and ensures the achievement of atomic resolution over a large area. The method is illustrated with examples of studying heterointerfaces of complex shape, selective oxidation, and selective etching of superlattices.
|
