VERTICAL NANOWIRE SHAPE MODIFICATION DURING ANNEALING
A. G. Nastovjak1,2, N. L. Shwartz1,2
1A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Keywords: nanowires, annealing, readsorption
Abstract
Vertical nanowire shape modification during the annealing process due to the readsorption of the material evaporated from neighboring wires and from the substrate are numerically calculated. The evaporation model from a set of isotropic point sources and the Knudsen-Lambert model are applied. The effects of the aspect ratio of the nanowire length to the distance between them and the material evaporation rate from the nanowire sidewall and the substrate on the nanowire shape are analyzed.
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