HOMOGENEOUS ARRAY OF NANOPITS ON THE SURFACE OF INALAS LAYERS GROWN BY THE MOLECULAR BEAM EPITAXY ON AN INP (001) SUBSTRATE
D. V. Gulyaev, D. V. Dmitriev, A. I. Toropov, S. A. Ponomarev, K. S. Zhuravlev
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: surface morphology of InAlAs, nanopits, indium phosphide platform, molecular beam epitaxy
Abstract
In this work, the surface morphology of InAlAs layers deviating from the lattice-matched composition with an InP substrate is studied. A linear relationship is shown between the dimensions of the pits and the thickness of the grown layer. The possibility of forming an array of nanopits uniform in size and shape on the surface of an InAlAs layer is demonstrated.
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