OPTIMIZATION OF THE THICKNESS OF A SINGLE-LAYER ANTIREFLECTIVE COATING OF SiO2 ON A SILICON PHOTODIODE DEPENDING ON THE INCIDENT LIGHT CHARACTERISTICS
A. V. Timofeev1, A. I. Milstein1,2, D. N. Grigoriev1,2,3
1Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Novosibirsk State Technical University, Novosibirsk State Technical University
Keywords: antireflective coating, photodiode, reflection coefficient
Abstract
Theoretical studies of the dependence of the optimal thickness of a single-layer antireflective coating of SiO2 on a silicon photodiode on the characteristics of light incident on the photodiode have been carried out. It is found that the optimal thickness of a single-layer antireflective coating of SiO2 for various angular intensity distributions increases the quantum efficiency of the photodiode up to 1.1 times compared to the classical single-layer antireflective coating with a thickness of λ/4n, which is an optimal coating in the case of normal incidence of monochromatic light.
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