EFFECT OF COATINGS CONTAINING REE IONS ON THE PHOTOVOLTAIC CHARACTERISTICS OF STRUCTURES BASED ON POROUS SILICON
N. V. Latukhina, D. A. Nesterov, N. A. Poluektova, D. A. Shishkina, D. A. Uslin
Samara National Research University, Samara, Russia
Keywords: porous silicon, solar cells, rare earth elements, current-voltage characteristics, capacitance-voltage characteristics, photosensitivity spectra, X-ray radiation
Abstract
The effect of coatings containing dysprosium or erbium ions on the properties of photosensitive structures based on porous silicon is investigated. The current-voltage, capacitance - voltage and spectral characteristics of structures with a p-n junction and films of erbium or dysprosium fluorides, as well as structures with an oxide layer of a complex composition containing erbium ions, are measured. The effect of X-ray radiation with a quantum energy of 6.9 keV on the photoelectric properties of structures with a porous layer and a coating of erbium fluoride is studied. A noticeable effect of the coating on the characteristics of the structures is shown.
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