PtSi/POLY-Si STRUCTURES FOR IR DETECTORS: INVESTIGATION OF FORMATION PROCESSES AND DEVELOPMENT OF THE MANUFACTURING METHOD
K. V. Chizh, L. V. Arapkina, V.P. Dubkov, D. B. Stavrovskii, V.A. Yuryev, M.S. Storozhevykh
Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia
Keywords: silicon, thin films, platinum silicide, IR spectroscopy
Abstract
One of the promising approaches to solving the problem of producing low-cost photodetector arrays is to develop diode arrays based on structures with PtSi/poly-Si Schottky barriers produced by standard CMOS processes. In creating such structures, several problems arise, and the present study is aimed at solving such problems. The diffusion of hydrogen atoms from a Si3N4 layer into a silicon film at room temperature at the step of formation of a Si/Si3N4 layer is detected and studied using Fourier-transform infrared spectroscopy. In studying the formation of PtSi/poly-Si layers, it is found that an interface film consisting of Pt3Si and Pt2Si silicides is formed on the surface of poly-Si during magnetron sputtering of platinum. When the Pt/(Pt3Si+Pt2Si)/poly-Si structure is heated to ∼ 300°C for 30 min, the transition of the Pt3Si phase to the Pt2Si phase occurs. A further increase in temperature leads to the formation of the PtSi compound; at the temperature of 480°C, all silicides completely transform into the PtSi phase.
|
