ANALYSIS OF THE EXPERIMENTAL CURVE OF SILICON NANOSANDWICH MAGNETIZATION USING NUMERICAL SIMULATION
V. V. Romanov1, V. A. Kozhevnikov1, Yu. P. Yashin1, N. T. Bagraev1,2, N. I. Rul'1,2
1Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Keywords: de Haas-Van Alphen effect, silicon nanosandwich structure, negative correlation energy, energy density of states, carrier effective mass, Landau levels, numerical simulation, supercomputer
Abstract
The field dependence of the magnetization of a silicon nanosandwich, observed at room temperature, demonstrates a very complex character. The dependence is formed by the main contribution of the quantum magnetic effect, which is interpreted as the de Haas - Van Alphen effect with integer and fractional filling factors. Based on the previously found two-dimensional carrier density, the critical fields for the corresponding filling factors are calculated. Modeling of the de Haas - Van Alphen oscillations at a high temperature (T = 300 K) is performed according to a given distribution of the energy density of states of a silicon nanosandwich in the vicinity of Landau levels. The computational procedure is implemented on a supercomputer. The dependence of the carrier effective mass on the strength of the external magnetic field, previously discovered by us, is taken into account.
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