INVESTIGATION OF SEMICONDUCTOR QUANTUM WELLS COUPLED VIA TUNNELING
N.N. Rubtsova, A.A. Kovalyov, D.V. Ledovskikh, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: quantum wells, electron-hole recombination, charge carrier tunneling between quantum wells
Abstract
The kinetics of reflectivity signals from nanostructures including an equal number of quantum wells with an identical composition InxGa1-xAs (x=0.32) with GaAs barriers of 2, 4, 6, and 8 monolayers grown over a semiconductor reflector under identical conditions are investigated by the pump-probe technique. The tendency of recovery time shortening for thinner barriers is found. The prospects of further research and practical application of quantum wells coupled via charge carrier tunneling are under consideration.
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