PRODUCTION OF PLANAR ELEMENTS OF TERAHERTZ OPTICS BY MEANS OF DEEP X-RAY LITHOGRAPHY
A.N. Gentselev1, S.G. Baev2
1Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: X-ray mask, LIGA-mask, laser microprocessing, laser cutting, LIGA technology, contrast of the X-ray mask, resist mask, aspect ratio
Abstract
The features of carrying out X-ray lithography by synchrotron radiation (SI) using masks on thin (up to 50 microns) and thick (up to 1 mm) layers of X-ray resists are described with an illustration on specific examples of X-ray lithography stations of the VEPP-3 storage ring. The calculated graphs of the spectral dependence of the resolution of X-ray lithography on the size of the gap between the working surfaces of the X-ray mask and the substrate being processed, graphs of the dependences of the SI beam intensity and the absorbed power density on the depth of radiation penetration into the resist, and similar graphs for the contrast of the X-ray mask are presented. A description of self-supporting perforated (with through holes) metal X-ray masks is given. Reaching a new qualitative level of their production by laser cutting with a femtosecond pulse duration is illustrated by SEM photos, which will allow obtaining samples of planar elements of terahertz optics in the form of metal microstructures formed by means of the LIGA technology, varying the cell sizes, the width of “the line” of structures, and their thickness in a significantly wider range than was done earlier.
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