SINGLE PHOTON DETECTORS BASED ON INP/INGAAS/INP AVALANCHE PHOTODIODES
V.V. Preobrazhenskii, I. B. Chistokhin, M. A. Putyato, N. A. Valisheva, E. A. Emelyanov, M. O. Petrushkov, A. S. Pleshkov, I. G. Neizvestny, I. I. Ryabtsev
Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, ISP SB RAS, Novosibirsk, Russia
Keywords: single photon detector, geiger mode avalanche photodiode, heterostructure, InP/InGaAs/InP, dark current, detection efficiency, dark count rate, afterpulsing coefficient, molecular beam epitaxy, selective alloying
Abstract
The issues related to the development and manufacturing single photon detector based on single-photon avalanche photodiodes (SPAD) InP/InGaAs/InP, operating in Geiger mode on telecommunications wavelength 1550 nm are discussed. A description of the SPAD design is given. The method of obtaining the InP/InGaAs/InP heterostructure by molecular-beam epitaxy, methods of manufacturing SPAD chip by planar technology, features of selective doping with zinc p-regions in the InP layer and developed electronic schemes for measurement main parameters of SPAD are described. Preliminary results of measurements SPAD parameters are presented.
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