CHARACTERIZATION OF CRYSTALLINE PERFECTION OF HETEROSTRUCTURES LAYERS (013)HgCdTe/CdTe/ZnTe/GaAs BY THE METHOD OF SECOND HARMONIC GENERATION
S.A. Dvoretsky1,2, M.F. Stupak3, N.N. Mikhailov1,4, S.N. Makarov3, A.G. Elesin3, A.G. Verkhoglyad3
1The Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
2Tomsk State University, Tomsk, Russia
3Technological Design Institute of Scientific Instrument Engineering of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia
4Novosibirsk State University, Novosibirsk, Russia
Keywords: sphalerite class crystals, second harmonic, azimuthal angular dependencies, nonlinear susceptibility tensor, microparticles, reversal, heterostructures, MLE, CdHgTe, CdTe, GaAs
Abstract
The analysis of the processes of generation of the second harmonic in the layers of CdTe, CdxHg1-xTe and the substrate from GaAs heterostructure CdxHg1-xTe/CdTe/ZnTe/GaAs orientation (013) is carried out. Measurements of the azimuthal dependence of the signals of the second harmonic in comparison with the calculated data obtained during the numerical modeling of the ideal crystal for a given orientation near the cut (013) were carried out. It is shown that the substrate and epitaxial layers after cultivation have a reversal of the orientation plane, which was for substrates of GaAs +8 and -3 angular degrees from the ideal plane (013), for layers of heterostructures - up to 8 angular degrees from the orientation of the substrate, which has a weak dependence on the composition in thickness. The observed reversals of the orientation plane depend on the discrepancy between the parameters of the lattice of the conjugated materials of the heterostucture CdxHg1-xTe /CdTe/ZnTe/GaAs. The recorded increase in noise with the minimums of azimuthal dependence of the second harmonic signal in the layers of CdxHg1-xTe is due to the presence of disoriented microsicts.
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