Controlling the Properties of a BaxSr1-xTiO3 Ferrelectric Film
V. B. Shirokov1,2, P. E. Timoshenko2, V. V. Kalinchuk1
1Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, 344006, Russia
2Southern Federal University, Rostov-on-Don, 344006, Russia
Keywords: ferroelectric film, phenomenological model, thermoelastic deformation, initial deformation, initial stress, surface acoustic waves, electromechanical coupling coefficient
Abstract
A method is proposed to control the properties of thin ferroelectric films under forced deformation due to the size mismatch of the crystalline lattices of film and substrate materials and due to the difference of their thermal expansion coefficients. Control is based on additional mechanical deformation of the substrate. A model of a single-crystal BaxSr1-xTiO3 film is studied within the framework of phenomenological theory using the Landau potential. It is shown that additional uniaxial deformation of the substrate in a BaxSr1-xTiO3 film changes the material constants of the film. Abnormal change occurs at deformation values close to the values at which the phase state of the film changes. The generation of surface acoustic waves is studied. The results of modeling simulations indicate the possibility of controlling the excitation of surface acoustic waves in the film-silicon substrate heterostructure.
DOI: 10.1134/S0021894421050084
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