SCRIBING OF SILICON WAFERS BY LASER RADIATION IN AN AQUEOUS ENVIRONMENT
A. R. Novoselov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: VLSI, laser scribing, damaged area
Abstract
The result of scribing of silicon very large-scale integrated (VLSI) circuits in hybrid infrared photodetectors by laser radiation in an aqueous medium is studied. The width of the material damage around the scribe groove (approximately 47 microns) and the occurrence of a water hammer when water boils during scribing (exerting the pressure on the material equal to 1.5 x 10-6 kg/ μm2 or more) are determined.
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