TRANSPORT PROPERTIES OF TWO-DIMENSIONAL TOPOLOGICAL INSULATORS AND EXCITON CONDENSATES
M.V. Boev1,2, L.S. Braginskii1,3, V.M. Kovalev1,2, L.I. Magarill1,3, M.M. Mahmoodian1,3, M.V. Entin1,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Keywords: двумерный топологический изолятор, краевые состояния, низкотемпературная проводимость, экситон, конденсат Бозе-Эйнштейна, two-dimensional topological insulator, edge states, low-temperature conductivity, exciton, Bose-Einstein condensate
Abstract
A review of recent research performed at the Laboratory of Theoretical Physics of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences is presented. Two directions of research are discussed: the transport properties of two-dimensional excitonic systems and transport of electrons in two-dimensional topological insulators. Significant attention is paid to excitonic systems in the regime of the Bose-Einstein condensation and to the theory of electrical conductivity in two-dimensional topological insulators with the close-to-critical sample thickness, which is induced by the branched network of edge states penetrating through the sample.
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