SUBMINIATURE LIGHT SOURCES BASED ON SEMICONDUCTOR NANOSTRUCTURES
V.A. Gaisler, I.A. Derebezov, A.V. Gaisler, D.V. Dmitriev, A.I. Toropov, M.M. Kachanova, Yu.A. Zhivodkov, A.S. Kozhuhov, D.V. Shcheglov, A.V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: полупроводниковые квантовые точки, экситон, биэкситон, излучатели одиночных фотонов, лазеры с вертикальным резонатором, Semiconductor quantum dots, exciton, biexciton, single photon emitters, vertical-cavity surface-emitting laser
Abstract
The paper describes the operating principles of subminiature semiconductor emitters and offers the research results on the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences over the last three years. A single photon emitter based on AlxIn1-xAs/AlyGa1-yAs quantum dots has been developed. Results of developing single-mode vertical-cavity surface-emitting lasers with a wavelength of 794.8 nm oriented for future application in the chip-scale atomic clock and operating at the transition 5S1/2→5P1/2 of Rb87 atoms are reported.
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