MOLECULAR BEAM EPITAXY OF AN InAsSb SOLID SOLUTION: EFFECT OF THE GROWTH RATE ON THE COMPOSITION OF EPITAXIAL LAYERS
E.A. Emelyanov, M.O. Petrushkov, M.A. Putyato, I.D. Loshkarev, A.V. Vasev, B.R. Semyagin, V.V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: молекулярно-лучевая эпитаксия, твёрдые растворы InAsSb, скорость роста, рентгеноструктурный анализ, molecular beam epitaxy, InAsSbsolid solutions, growth rate, X-ray structural analysis
Abstract
The influence of the growth rate (flux density of In atoms) on the composition of InAsxSb1-x(100) solid solutions during molecular beam epitaxy (MBE) with As2 and Sb4 fluxes is experimentally investigated. It is found that an increase in the growth rate at constant ratios of the As2 to Sb4 fluxes and of the In atoms flux to the total flux of the V group molecules leads to a decrease in the arsenic fraction in the solid solution. It is shown that the growth rate is an independent parameter of the MBE process, which determines the composition of InAsxSb1-x solid solutions. A mechanism for the formation of the solid solution composition is proposed, which explains the role of the growth rate.
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