INFLUENCE OF SURFACE PRETREATMENT ON THE SURFACE CHARGE DENSITY AT THE INTERFACE BETWEEN MCT MBE AND AL2O3 ALD
G.Yu. Sidorov, D.V. Gorshkov, Yu.G. Sidorov, I.V. Sabinina, V.S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: кадмий-ртуть-теллур, оксид алюминия, молекулярно-лучевая эпитаксия, атомно-слоевое осаждение, фотодиоды, диэлектрик, пассивирующее покрытие, вольт-фарадные характеристики, структуры металл-диэлектрик-полупроводник, плотность поверхностного заряда, Mercury-cadmium telluride (MCT), alumina oxide, molecular beam epitaxy (MBE), atomic layer deposition (ALD), photodiodes, dielectric, passivation coating, voltage-capacitance characteristics (C-V), metal-insulator-semiconductor (MIS), surface charge density
Abstract
The influence of various Hg1-xCdxTe surface treatments prior to Al2O3 atomic layer deposition (ALD) on the interface charge density has been investigated. MIS structures with different surface pretreatments have been fabricated. The voltage-capacitance current-voltage characteristics have been measured, and the interface charge density has been calculated. Films with the surface composition х=0.22 with natural oxide have a nonuniform charge distribution over the surface varying within (0.8÷1.8)×10-8 Q/cm2, which can cause inversion of the conductivity type near the surface. Treating MCT films with Hg vapor at room temperature causes negative charge formation in the interval (0.4÷1.6) ×10-8 Q/cm2.
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