NEW HETEROSTRUCTURES FOR HIGHER POWER MICROWAVE DA-pHEMTs
K.S. Zhuravlev1, D.Yu. Protasov1,2, A.K. Bakarov1, A.I. Toropov1, D.V. Gulyaev1, V.G. Lapin3, V.M. Lukashin3, A.B. Pashkovskii3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Istok Res & Prod Corp, Fryazino, Moscow Region, Russia
Keywords: гетероструктуры pHEMT, донорно-акцепторное легирование, концентрация, подвижность, насыщенная скорость дрейфа, удельная выходная мощность, heterostructures, pHEMT, donor-acceptor doping, concentration, 2DEG mobility, saturated drift velocity, output power density
Abstract
In new pHEMT heterostructures with donor-acceptor doping, the confinement of the two-dimensional electron gas is enhanced by increasing potential barriers. In turn, this makes it possible to practically double the concentration of 2DEG in the QW without the emergence of parasitic parallel conductivity and to increase the saturated drift velocity in a high electric field by a factor of 1.2-1.3. As a result, the output power density of the transistors could be increased by more than 50% as compared to the best values.
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