MOLECULAR BEAM EPITAXY OF STRESSED NANOHETEROSTRUCTURES BASED ON COMPOUNDS OF GROUP 4 MATERIALS (Si, Ge, and Sn)
A.S. Deryabin, A.E. Dolbak, M.Yu. Esin, V.I. Mashanov, A.I. Nikiforov, O.P. Pchelyakov, L.V. Sokolov, V.A. Timofeev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: гетероструктуры, Si, Ge, Sn, молекулярно-лучевая эпитаксия, диффузия, дислокации, heterostructures, Si, Ge, molecular beam epitaxy, diffusion, dislocations
Abstract
This paper presents the results of a study of the formation of stressed nanoheterostructures based on compounds of group 4 materials (Ge, Si, and Sn). The mechanisms of diffusion of silver, tin, and lead atoms over the surface are established, and the temperature dependences of the diffusion coefficients of these elements are derived. It is shown that the diffusion of silver, tin, and lead atoms proceeds by the mechanism of solid-phase spreading with the formation of surface phases. Experimental data that indicate the predominant role of edge dislocations and edge-type dislocation complexes in relaxation of the Ge/Ge0,5Si0,5/Si(001) heterostructure are presented. Tin-rich islands with a Si pedestal on a Si(100) substrate are obtained by molecular beam epitaxy. Initially, an Sn film is applied to the Si surface. During subsequent annealing, an array of Sn islands is formed, which are used as catalysts for the growth of nanoobjects. The tin-rich islands with a Si pedestal are formed after silicon deposition at temperatures of 300-450ºC on the surface with Sn islands. The growth of the islands with the pedestal occurs by the vapor-liquid-solid mechanism. Intense photoluminescence is detected from the tin-rich islands with the Si pedestals in the wavelength range of 1.3-1.7 microns.
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