PROGRESS AND CHALLENGES OF MOLECULAR BEAM EPITAXY OF CdHgTe
V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, I.V. Sabinina, Yu.G. Sidorov, V.A. Shvets, M.V. Yakushev, A.V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: молекулярно-лучевая эпитаксия, теллурид кадмия и ртути, подложки, дислокации, дефекты, рост, легирование, molecular beam epitaxy, cadmium and mercury telluride, substrates, dislocations, defects, growth, doping
Abstract
An overview of the current state, problems and their solutions, as well as the potential for the development of the molecular beam epitaxy (MBE) technology for obtaining CdHgTe structures on various substrates for infrared detectors is proposed. The data on ultra-high vacuum MBE sets and equipment for monitoring the growth processes for different substrates, preparation of surface substrates, growth of buffer layers on alternative substrates, and growth and doping of CdHgTe layers are reported. Basic structural defects, such as dislocations and macrodefects, and the minimum achieved levels of their concentration, which limit the quality of the detectors, are presented. The data on the problems of external doping of CdHgTe layers and resultant electrophysical parameters of such layers are considered. The photovoltaic parameters of IR detectors are presented; they are close to theoretical predictions and show that the MBE technology is ready for production of CdHgTe/Si structures on substrates six inches in diameter. The results of research and development of the growth and doping processes of CdHgTe structures on GaAs and Si substrates 76.2 mm in diameter at the Rzhanov Institute of Semiconductor Physics SB RAS are demonstrated.
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