X-RAY TOPO-TOMOGRAPHY USING LABORATORY SOURCES FOR STUDYING SINGLE DISLOCATIONS IN LOW ABSORBING SILICON SINGLE CRYSTAL
D. A. Zolotov1, V. E. Asadchikov1,2, A. V. Buzmakov1, I. G. D'yachkova1, Yu. S. Krivonosov1, F. N. Chukhovskii1, E. V. Suvorov3
1Shubnikov Institute of Crystallography, Crystallography and Photonics Federal Scientific Research Centre, Russian Academy of Sciences, Leninskii prosp 59, Moscow, 119333 Russia
2Lomonosov Moscow State University, Leninskie Gory 1/2, Moscow, 119234 Russia
3Institute of Solid State Physics, Russian Academy of Sciences, 142432, ul. Akademika Osip'yana 2, Chernogolovka, Moscow region, Russia
Keywords: рентгеновская топография, рентгеновская томография, единичные дислокационные полупетли, алгебраические методы реконструкции, X-ray topography, X-ray tomography, single dislocation half-loops, algebraic reconstruction techniques
Abstract
This paper is a continuation of a series of on the development of the X-ray topo-tomography method using laboratory equipment. The results of a study of the spatial location of a single polygonal dislocation half-loop in a silicon single crystal were obtained for testing the sensitivity of the X-ray TOPO-TOMO diffractometer. A comparison was made with high-resolution experimental data obtained at the European synchrotron radiation facility (ESRF). The experimental procedure and software and hardware for the 3D reconstruction of the investigated single defect - a polygonal dislocation half-loop - are described.
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