INFLUENCE OF A DISLOCATION FILTER BASED ON LT-GAAS ON THE PERFECTION OF GaAs/Si LAYERS
D. S. Abramkin1,2, M. O. Petrushkov1, E. A. Emel'yanov1, M. A. Putyato1, B. R. Semyagin1, A. V. Vasev1, M. Yu. Esin1, I. D. Loshkarev1, A. K. Gutakovskii1,2, V. V. Preobrazhenskii1, T. S. Shamirzayev1,2,3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, 630090, Novosibirsk
2Novosibirsk State University, ul. Pirogova. 2. 630090, Novosibirsk
3Ural Federal University, ul. Mira 19, Ekaterinburg, 620002
Keywords: эпитаксия, низкотемпературный GaAs, дислокационный фильтр, epitaxy, low-temperature GaAs, dislocation filter
Abstract
The influence of dislocation filters developed on the basis of low-temperature layers (LT) of GaAs and post-growth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of germinating dislocations and reduce the surface roughness. Post-hrowth annealing at a temperature of 650 ºC reduces the concentration of centers of nonradiative recombination in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.
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