FORMATION OF THICK HIGH-ASPECT-RATIO RESISTIVE MASKS BY THE CONTACT PHOTOLITHOGRAPHY METHOD
A. N. Gentselev1, F. N. Dul'tsev2,3, V. I. Kondrat'ev1, A. G. Lemzyakov1
1Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, pr. Akademika Lavrent'eva, 11
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, pr. Akademika Lavrent'eva, 13
3Novosibirsk State University, 630090, Novosibirsk, ul. Pirogova, 2
Keywords: глубокая контактная фотолитография, установка контактной фотолитографии, резист SU-8, LIGA-шаблон, микрорельеф штампа или литьевой формы, deep contact photolithography, contact photolithography setup, SU-8 resist, LIGA template, stamp or cast mould microrelief
Abstract
A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological pictures for LIGA templates, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate a research setup, are described. A source of exposure radiation in this setup is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with lateral sizes ~5 μm, height ~70 μm, and aspect ratio ~14) and also the titanium stamp microrelief (with height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.
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