MOLECULAR BEAM EPITAXY OF BaF2/CaF2 BUFFER LAYERS ON THE Si(100) SUBSTRATE FOR MONOLITHIC PHOTORECEIVERS
N. I. Filimonova, V. A. Ilyushin, A. A. Velichko
Novosibirsk State Technical University, 630073, Novosibirsk, prosp. Karla Marksa, 20
Keywords: молекулярно-лучевая эпитаксия, фторид кальция, фторид бария, кремний, буферный слой, АСМ, морфология поверхности, molecular beam epitaxy, calcium fluoride, barium fluoride, silicon, buffer layer, AFM, surface morphology
Subsection: PHYSICAL AND TECHNICAL PRINCIPLES OF MICRO- AND OPTOELECTRONICS
Abstract
This paper describes the study of the surface morphology of BaF2 epitaxial films grown by means of molecular beam epitaxy in various growth regimes on a CaF2 Si(100) surface, which is performed by means of atomic force microscopy. The CaF2 layers were obtained on a Si(100) substrate in a low-temperature growth regime (Ts = 500 oC). The technological regimes of growth of BaF2 continuous films with a smooth surface on CaF2/Si(100), suitable as buffer layers for the subsequent growth of PbSnTe layers or other semiconductors, such as A4B6, and solid solutions based on them.
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