STOCHASTIC SIMULATION OF ELECTRON-HOLE RECOMBINATION IN TWO-DIMENSIONAL AND THREE-DIMENSIONAL INHOMOGENEOUS SEMICONDUCTORS. PART II. SIMULATION RESULTS
K. K. Sabelfeld, A. E. Kireeva
Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 6, Novosibirsk, 630090 Russia
Keywords: рекомбинация, полупроводник, диффузия, туннелирование, стохастическое моделирование, клеточный автомат, recombination, semiconductor, diffusion, tunneling, stochastic simulation, cellular automaton
Abstract
This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The kinetics of the particle recombination in pure diffusion and diffusion with tunneling is studied. Certain difference between the behavior of electron-hole spatial correlations calculated by discrete and continuous models and the nature of segregation formation in three-dimensional semiconductors associated with that behavior is revealed. The comparative analysis of the simulation characteristics determined via cellular automatic and continuous recombination models is carried out.
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