CHARGE TRANSPORT IN THIN HAFNIUM AND ZIRCONIUM OXIDE FILMS
D. R. Islamov1,2, V. A. Gritsenko1,2, A. Chin3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Academika Lavrent'eva, 13
2Novosibirsk State University, 630090, Russia, Novosibirsk, ul. Pirogova, 2
3National Chiao Tung University, University Road 1001, Hsinchu, 300, Taiwan ROC
Keywords: аморфные плёнки, диэлектрики с высокой диэлектрической проницаемостью, оксид гафния, оксид циркония, транспорт, amorphous films, dielectric with high dielectric permittivity, hafnium oxide, zirconium oxide, transport
Abstract
The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by photon facilitated tunneling between traps. From the comparison of experimental current-voltage caracteristics of MIS structures n -Si/HfO2/Ni and n -Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.
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