INTROSCOPY IN NANO-MESOSCOPIC PHYSICS: SINGLE ELECTRONICS AND QUANTUM BALLISTICS
V. A. Tkachenko, O. A. Tkachenko, Z. D. Kvon, A. V. Latyshev, A. L. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
Keywords: наноструктуры, одноэлектроника, квантовый транспорт, мезоскопика, моделирование, nanostructures, single electronics, quantum transport, mesoscopics, simulation
Abstract
A method is presented to be used in a computational experiment aimed at studying the internal structure of nano-mesoscopic objects, i.e., conducting subsystems and quantum phenomena in solid submicron objects, which demonstrate an individual behavior of low-temperature resistance.
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