MONTE CARLO SIMULATION OF THE FORMATION OF AIIIBV NANOSTRUCTURES WITH THE USE OF DROPLET EPITAXY
M. A. Vasilenko1,2, A. G. Nastov'yak1, I. G. Neizvestnyi1,2, N. L. Shwartz1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Novosibirsk State Technical University, 630073, Novosibirsk, prosp. K. Marksa, 20
Keywords: капельная эпитаксия, нанокольца, GaAs, моделирование Монте-Карло, droplet epitaxy, nanorings, GaAs, Monte Carlo simulation
Abstract
A Monte Carlo grid model is proposed to describe the formation of semiconductor nanostructures by the vapor-liquid-crystal growth mechanism. This model is used to simulate the growth of GaAs nanostructures by the method of droplet epitaxy in the temperature range from 500 to 600 K in As2 flows with intensity of 0.005-0.04 ML/s. The morphology of the resultant structures is demonstrated to depend on the growth parameters. Etching of the GaAs substrate by a gallium droplet is studied. The ranges of temperature and As flow rates necessary for the formation of GaAs nanorings are determined. The conditions of the formation of single and double concentric rings are analyzed.
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