DISTRIBUTION OF THE CONCENTRATION OF ADATOMS ON AN EXTRAWIDE TERRACE OF THE Si(111) SURFACE UNDER CONDITIONS OF SUBLIMATION
D. I. Rogilo1, N. E. Rybin1,2, L. I. Fedina1,2, A. V. Latyshev1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Novosibirsk State University, 630090, Novosibirsk, ul. Pirogova, 2
Keywords: кремний, поверхностная диффузия, сверхструктура, атомные ступени, отражательная электронная микроскопия, атомно-силовая микроскопия, silicon, surface diffusion, superstructure, atomic steps, reflection electron microscopy, atomic force microscopy
Abstract
The formation of an absorption layer on the Si(111) surface under conditions of sublimation at temperatures of 1000-1100 °C and subsequent quenching at T = 750 °C is studied by methods of in situ superhigh-vacuum reflection electron microscopy and ex situ atomic force microscopy. The distribution of the concentration of adatoms on an extrawide (~60 μm) atomically smooth terrace is determined for the first time, and the diffusion length xs = 31 ± 2 μm at T = 1000 °C is obtained. The analysis of the temperature dependence of the equilibrium concentration of adatoms near a monatomic step allows pioneering measurements of the energy necessary for the adatom to pass from the step to the terrace Ead ≈ 0,68 eV. Based on these results, the energy parameters for some atomic processes on the Si(111) surface are estimated.
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