RAMAN STUDIES OF PHASE AND ATOMIC COMPOSITIONS OF GESI NANOSYSTEMS AFTER FEMTOSECOND PULSED ANNEALING
A. V. Dvurechenskii1,2, V. A. Volodin1,2, G. K. Krivyakin1, A. A. Shklyaev1,2, S. A. Kochubei1, I. G. Neizvestnyi1, J. Stuchlik3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Novosibirsk State University, 630090, Novosibirsk, ul. Pirogova, 2
3Institute of Physics ASCR, 16200, Czech Republic, Praha 6, Stresovice, Cukrovarnicka, 112/10
Keywords: комбинационное рассеяние света, фононы, кремний, германий, Raman scattering, phonons, silicon, germanium
Abstract
The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon.
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