FORMATION OF SILICON NANOCRYSTALS IN Si-SiO2-О±-Si-SiO2 HETEROSTRUCTURES DURING HIGH-TEMPERATURE ANNEALING: EXPERIMENT AND SIMULATION
I. G. Neizvestnyi1,2, V. A. Volodin1,3, G. N. Kamaev1, S. G. Cherkova1, S. V. Usenkov1, N. L. Shwartz1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Novosibirsk State Technical University, 630073, Novosibirsk, prosp. K. Marksa, 20
3Novosibirsk State University, 630090, Novosibirsk, ul. Pirogova, 2
Keywords: многослойные структуры, нанокристаллы, кремний, тонкие плёнки SiO, плазмохимическое осаждение, моделирование методом Монте-Карло, multilayer structures, nanocrystals, silicon, SiO thin films, plasmochemical deposition, Monte Carlo simulation
Abstract
Experiments and simulations are performed to study the formation of silicon nanocrystals (Si-NC) in multilayer structures with alternating ultrathin layers of SiO2 and amorphous hydrogenized silicon (α-Si:H) during high-temperature annealing. The effect of annealing on the transformation of the structure of the α-Si:H layers is studied by methods of high-resolution transmission electron microscopy, Raman spectroscopy, and photoluminescence. The conditions and kinetics of Si-NC formation are analyzed by the Monte Carlo technique. The type of the resultant crystalline silicon clusters is found to depend on the thickness and porosity of the original amorphous silicon layer located between the SiO2 layers. It is shown that an increase in the thickness of the α-Si layer in the case of low porosity leads to the formation of a percolation silicon cluster instead of individual Si nanocrystals.
|
