RADIATION DETECTORS BASED ON THE PBSNTE:IN FILMS, SENSITIVE IN THE TERAHERTZ REGION OF THE SPECTRUM
I. G. Neizvestnyi1, A. E. Klimov1, V. V. Kubarev2, V. N. Shumskii1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Lavrent'eva, 13
2Budker Institute of Nuclear Physics, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Lavrent'eva, 11
Keywords: фотоприёмники, фотоприёмные устройства, инфракрасный диапазон, субмиллиметровый диапазон, PbSnTe:In, photodetectors, infrared range, submillimeter range, PbSnTe:In
Abstract
This paper presents the review of studies of photoelectric properties of the PbSnTe:In films obtained by molecular beam epitaxy and the photosensitive structures of the far infrared and submillimeter ranges based on these films. The parameters of this type of multielement photodetectors and the detectors based on doped semiconductors and superconductors. Ruled (2 x 128 elements) and matrix (128 x 128 elements) multielement PbSnTe:In based photodetectors with a sensitive edge equal to ~22 m and an operating temperature of T ≤ 16 K are implemented. In the background-free conditions, the power equivalent to the noise reached MES ≤ 10-18 W/Hz0.5 for T = 7 K for the radiation source of the absolute black body type at TABB = 77 K. The submillimeter region of the spectrum had sensitivity to laser radiation with a wavelength λ ≤ 205 μm and the value of MES ≤ 10-12 W/Hz0.5 without optimization of the layout design of the photosensitive member and minimization of the measurement circuit noise. The directions of the development of PbSnTe:In based radiation detectors are considered.
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