THREE-SPECTRUM MULTIELEMENT PHOTODETECTOR
I. G. Neizvestnyi, V. N. Shumskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, pr. Lavrentiev, 13
Keywords: молекулярно-лучевая эпитаксия, гетеропереход, p-n-переход, чувствительный элемент, линейка фотоприёмников, многоэлементное фотоприёмное устройство, molecular beam epitaxy, heterojunction, p-n junction, detector, photodetector line, multielement photodetector
Abstract
This paper describes the design and characteristics of the three-spectrum multielement photodetector with a sensitivity range from 0,6 to 12,0 μm, which consists of three lines of photodetectors with the sensitivity ranges from 0,6 to 0,9, from 3 to 5, and from 8 to 12 μm. The methods for manufacturing the lines, the photodetecting device in general, and its photoelectric characteristics are described.
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