FEATURES OF CURRENT–VOLTAGE CHARACTERISTICS OF FPbSnTe:In FILMS IN A MAGNETIC FIELD UNDER ELECTRON INJECTION FROM CONTACTS
D. V. Ishchenko, V. S. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, Novosibirsk 630090
Keywords: твёрдый раствор PbSnTe:In, магнитное поле, инжекция из контактов, эпитаксиальные плёнки, PbSnTe:In solid solution, magnetic field, injection from contacts, epitaxial films
Abstract
The current-voltage characteristics (CVC) of PbSnTe:In films with a tin content of x ≈ 0.29 at helium temperatures under conditions of unipolar injection from contacts and restriction by a spatial charge in a magnetic field of up to 4 T have been studied. Analysis of the CVC has shown that the observed CVC features change as the magnetic field is increased from 0 to 4 T. The relationship between these features and the presence of a multilevel system of traps located in the band-gap zone is validated.
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