MATERIAL SCIENCE ASPECTS OF DIELECTRIC FILM COMPOSITIONS IN THE PLANAR TECHNOLOGY OF GE BASED METAL-OXIDE-SEMICONDUCTOR STRUCTURES
E. B. Gorokhov, K. N. Astankova
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, prosp. Akademika Lavrent'eva 13, Novosibirsk, 630090
Keywords: Ge-планарная технология, МДП-транзистор, подзатворный диэлектрик модификация окислов германия, диоксида кремния, нитрида кремния, нитрида германия, Ge planar technology, MIS transistor gate insulator, germanium oxide modification, silicon dioxide, silicon nitride, germanium nitride
Abstract
A new technological route for fabricating Ge based metal-oxide-semiconductor (MOS) transistors has been developed based on materials research of dielectric layer compositions. Unwanted impurities were encapsulated by using the gate-first process and a modified thermal GeO2 layer with increased viscosity at the interface with the Ge substrate. Increasing the density of the oxide layer near germanium interaction with the deposited Si3N4 film hindered diffusion of impurities into adsorbed by the substrate surface into the transistor channel. This made it possible to increase the electron mobility in the MIS transistor and prevent its decrease at cryogenic temperatures.
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