PHASE SEPARATION AS A BASIS FOR THE FORMATION OF LIGHT-EMITTING SILICON NANOCLUSTERS IN SiOx FILMS IRRADIATED WITH SWIFT HEAVY IONS
S. G. Cherkova1,2, G. A. Kachurin1, V. A. Volodin1,2, A. G. Cherkov1,2, D. V. Marin1,2, V. A. Skuratov3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’eva 13, Novosibirsk, 630090 Russia
2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
3Joint Institute for Nuclear Research, ul. Zholio-Kyuri 6, Dubna, 141980 Russia
Keywords: Si nanoclusters, swift heavy ions, photoluminescence
Abstract
This paper presents a study of the effect of swift heavy Xe ions of energy 130-167 MeV at doses of 1012–1014 cm−2 and Bi ions of 700 MeV at doses of 3 · 1012–3 · 1013 cm−2 on films of stoichiometric thermal silicon dioxide, silicon dioxide films with ion-implanted excess silicon, and SiOx films with the stoichiometric parameter x varying from 0 to 2. According to electron microscopy and Raman spectroscopy data, irradiation with the swift heavy ions resulted in the formation of silicon nanoclusters. The luminescence spectra depended on the size, number, and structure of the Si nanoclusters formed. Their size can be controlled by varying both the effect parameters (primarily, the ion energy loss per unit length of the track) and the stoichiometric composition of the films.
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