EFFECT OF SPIN POLARIZATION OF EXCITONS ON THE ENERGY SPECTRA OF GaAs/AlGaAs HETEROSTRUCTURES
E. V. Kozhemyakina, K. S. Zhuravlev
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: gallium arsenide, excitons, transient photoluminescence, formation of excitons, exchange interaction
Subsection: SEMICONDUCTOR NANOHETEROSTRUCTURES FOR MICROWAVE ELECTRONICS AND SPINTRONICS
Abstract
The evolution of the energy position of the maximum of the free exciton photoluminescence line in high-quality GaAs/AlGaAs heterostructures under optical excitation by short laser pulses of high density 5 · 1014–2 · 1018 cm−3 is considered. The influence of screening of the Coulomb interaction and interexciton exchange interaction are discussed. These effects give corrections to the exciton peak energy position of opposite signs. The second effect is sensitive to the exciton spin orientation and is manifested as splitting of the energy peaks of excitons with angular momentum projections +1 and −1. The value of splitting is proportional to the density of excitons and to the degree of their spin polarization and reaches 1.5 meV.
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