ANALYSIS OF THE MICROWAVE LOSS IN AlGaAs/GaAs HETEROSTRUCTURE pin–DIODES
A. K. Shestakov, K. S. Zhuravlev
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: pin-diode, microwave, insertion loss
Subsection: SEMICONDUCTOR NANOHETEROSTRUCTURES FOR MICROWAVE ELECTRONICS AND SPINTRONICS
Abstract
The dependence of the microwave insertion loss on the parameters of the heterostructure pin–diode is investigated by means of numerical modeling. The mechanisms of the emergence of this loss are determined, and the most influential mechanism is identified.
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