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Avtometriya

2014 year, number 3

INTERLEVEL OPTICAL TRANSITIONS IN Si/GexSi1 - x/S QUANTUM WELLS

A. A. Bloshkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: quantum wells, Ge/Si heterostructures, optical absorption

Abstract

Results of mathematical simulation of the hole spectrum and optical absorption in Si/GexSi1 − x/Si quantum wells formed on virtual GeySi1 − y substrates are presented. It is shown that the presence of elastic strains in such a system can significantly change the position of absorption lines in GeSi heterostructures. Selecting the quantum well and virtual substrate compositions can change the intersublevel absorption wavelength in the range from 6 to 12 µm for light polarized in the quantum well plane. When tensile strain is applied, the change in the hole transition intensity under the influence of the light polarized in the quantum well plane reaches a factor of 1.8. Compressive strain changes the intersubband transition intensity by a factor of 1.45.