Spectroscopy of Single InAs Quantum Dots
A. V. Gaisler, A. S. Jaroshevich, I. A. Derebezov, A. K. Kalagin, A. K. Bakarov, A. I. Toropov, D. V. Shcheglov, V. A. Gaisler, A. V. Latyshev, A. L. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: semiconductor quantum dots, exciton, biexciton, fine structure, single photon emitter, emitters of entangled photon pairs
Abstract
Ensembles of InAs quantum dots with a very low density (~106 cm−2) are grown by molecular beam epitaxy, which allows the spectral characteristics of emission of single quantum dots to be studied by the method of cryogenic microphotoluminescence. With increasing quantum dot size, the splitting of exciton states is demonstrated to increase steadily to ~102 µeV. In the exciton energy range of 1.3–1.4 eV, the magnitude of this splitting is comparable with the natural width of the exciton lines. This result is important for the development of emitters of entangled photon pairs based on InAs quantum dots.
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