Terahertz Detectors Based on Pb1−xSnxTe : In Films
A. N. Akimov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Pashchin, V. N. Sherstyakova, V. N. Shumsky, V. S. Epov
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: THz radiation, metal–insulator transition, localized states in the bandgap, free electron laser, photoconductor prototype
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
Abstract
Results of experimental studies of Pb1−xSnx Te:In films grown by molecular beam epitaxy with the tin concentration close to band inversion are presented. An optimal concentration of indium is determined, and films with x > 0.3 are obtained, where the so-called metal–insulator transition is observed. Photoconductor prototypes are fabricated, and the photocurrent induced by free electron laser radiation in the range of 140–205 µm is measured. A possibility of using photoconductors for recording the own radiation of a body heated to a temperature of 300 K in a passive mode, including systems of image registration in the terahertz spectral range, is estimated.
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