Terahertz Detectors Based on Pb1в€’xSnxTe : In Films
A. N. Akimov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Pashchin, V. N. Sherstyakova, V. N. Shumsky, V. S. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: THz radiation, metal–insulator transition, localized states in the bandgap, free electron laser, photoconductor prototype
Abstract
Results of experimental studies of Pb1−xSnx Te:In films grown by molecular beam epitaxy with the tin concentration close to band inversion are presented. An optimal concentration of indium is determined, and films with x > 0.3 are obtained, where the so-called metal–insulator transition is observed. Photoconductor prototypes are fabricated, and the photocurrent induced by free electron laser radiation in the range of 140–205 µm is measured. A possibility of using photoconductors for recording the own radiation of a body heated to a temperature of 300 K in a passive mode, including systems of image registration in the terahertz spectral range, is estimated.
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