High-Performance 320 x 256 Long-Wavelength Infrared Photodetector Arrays Based on CdHgTe Layers Grown by Molecular Beam Epitaxy
a:2:{s:4:"TEXT";s:95:"A. V. Predein, Yu. G. Sidorov, I. V. Sabinina, V. V. Vasil’ev, G. Yu. Sidorov, I. V. Marchishin";s:4:"TYPE";s:4:"text";}
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: cadmium–mercury–tellur, photodetector arrays, current-voltage characteristics, hybrid assembly
Subsection: NANOHETEROSTRUCTURES FOR PHOTOELECTRIC CONVERTERS AND PHOTODETECTOR TUBES
Abstract
This paper gives the parameters of 320 × 256 element long-wavelength infrared photodetectors fabricated by a new improved technology based on heteroepitaxial mercury–cadmium–tellur structures. In these photodetectors, the variation of the photodiode bias voltage over the area of the array is minimized; inefficient photodiode regions related to both hybridization and spike-shaped growth defects of epitaxial films are eliminated; the current-voltage characteristics of the diodes in the resulting photodetectors are homogeneous and are limited by the diffusion current component up to −400 mV. The dark current is 0.25–0.45 nA, and R0A = (0.6–3) · 102 Om · cm2. The voltage sensitivity, the threshold irradiance, and the average NETD at the maximum sensitivity are 11.8 · 108 V/W, 3.7 · 10−8 W/cm2, and 26.8 mK, respectively. The percentage of defective elements is 1.5%.
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