Growth of AlGaN/GaN Heterostructures with a Two-Dimensional Electron Gas on AlN/Al2O3 Substrates
T. V. Malin, V. G. Mansurov, A. M. Gilinskii, D. Yu. Protasov, A. S. Kozhukhov, A. P. Vasilenko, K. S. Zhuravlev
a:2:{s:4:"TEXT";s:146:"Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia";s:4:"TYPE";s:4:"text";}
Keywords: ammonia molecular beam epitaxy, two-dimensional electron gas, AlGaN/GaN, high electron mobility GaN transistors, AlN/Al2O3 substrate
Subsection: FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES
Abstract
The possibility of using AlN/Al2O3 substrates to grow AlGaN/GaN hetero-epitaxial structures with a two-dimensional electron gas is studied. A method of calibrating the temperature of the substrates by measuring the thermal radiation spectrum is proposed. Differences between AlN/Al2O3 substrates that lead to differences in the electrophysical parameters of the grown structures are determined. AlN/Al2O3 substrates were used to grow AlGaN/GaN samples with a two-dimensional electron gas mobility in excess of 1300 cm2/(V · s) at an electron concentration in the channel higher than 1013 cm−2.
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