Growth of AlGaN/GaN Heterostructures with a Two-Dimensional Electron Gas on AlN/Al2O3 Substrates
T. V. Malin, V. G. Mansurov, A. M. Gilinskii, D. Yu. Protasov, A. S. Kozhukhov, A. P. Vasilenko, K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: ammonia molecular beam epitaxy, two-dimensional electron gas, AlGaN/GaN, high electron mobility GaN transistors, AlN/Al2O3 substrate
Abstract
The possibility of using AlN/Al2O3 substrates to grow AlGaN/GaN hetero-epitaxial structures with a two-dimensional electron gas is studied. A method of calibrating the temperature of the substrates by measuring the thermal radiation spectrum is proposed. Differences between AlN/Al2O3 substrates that lead to differences in the electrophysical parameters of the grown structures are determined. AlN/Al2O3 substrates were used to grow AlGaN/GaN samples with a two-dimensional electron gas mobility in excess of 1300 cm2/(V · s) at an electron concentration in the channel higher than 1013 cm−2.
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