Formation of Ordered Groups of Quantum Dots During Ge/Si Heteroepitaxy
V. A. Zinov’ev1, A. V. Dvurechenskii1, P. A. Kuchinskaya1, V. A. Armbrister1, A. V. Mudryi2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
2Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, ul. P. Brovki 19, Minsk, 220072 Belarus
Keywords: nanostructures, heteroepitaxy, quantum dots, spatial ordering
Abstract
A new approach to the creation of circularly ordered Ge nanoislands by epitaxy on the surface of a heterophase structure consisting of a Si(100) substrate with premade seeds in the form of SiGe nanodisks or SiGe nanorings is developed. It is shown that the spatial configuration of islands in the group is due to the nucleation of the islands in the area of local minima of the elastic energy density on the surface of a circular seed. On the basis of this approach, a number of multilayer structures with vertically aligned ring groups of quantum dots were grown. The elemental composition and luminescent properties of the ordered structures are studied.
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