Doped GaSe crystals: physical properties and applications in applied spectroscopy devices
Yu.M. Andreev1,2, G.V. Lanskii1,2, K.A. Kokh3, A.N. Soldatov4, A.V. Shayduko1,2
1Institute of Monitoring of Climatic and Ecological Systems of the Siberian Branch of the RAS, 634055, Tomsk, 10/3, Academichesky ave
2Siberian Physical-Technical Institute of the Tomsk State University, 634050, Tomsk, pl. Novo-Sobornaya, 1, Russia
3V.S. Sobolev Institute of Geology and Mineralogy of the Siberian Branch of the RAS, 630090, Novosibirsk, 3, Ac. Koptyuga ave. IGM SB RAS
4National Research Tomsk State University, 36, Lenin Avenue, Tomsk, 634050,Russia
Keywords: nonlinear crystal, GaSe, doping, frequency conversion, mid-IR, THz
Subsection: TOPICAL ISSUE
Abstract
Results on modification of improved synthesis and growth technologies of doped GaSe crystals, design of characterization methods and results of investigation of physical properties, design of tunable mid-IR and wide spectral bandwidth THz parametric frequency converters, first results of its applications in applied spectroscopy are summarized.
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