SILICON DIFFRACTIVE OPTICAL ELEMENTS FOR HIGH-POWER MONOCHROMATIC TERAHERTZ RADIATION
a:2:{s:4:"TEXT";s:286:"A. N. Agafonov1, B. O. Volodkin1, A. K. Kaveev2, B. A. Knyazev3,4, G. I. Kropotov2, V. S. Pavel’ev1,5, V. A. Soifer1,5, K. N. Tukmakov1, E. V. Tsygankova2, Yu. Yu. Choporova3,4";s:4:"TYPE";s:4:"html";}
a:2:{s:4:"TEXT";s:680:"1Korolev Samara State Aerospace University, Moskovskoe Shosse 34, Samara, 443086 Russia
andr_agafonov@mail.ru
2Tydex company, ul. Domostroitel’naya 16, St. Petersburg 194292, Russia
andreykaveev@tydex.ru
3Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 11, Novosibirsk, 630090 Russia
knyazev@inp.nsk.su
4Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090 Russia
yulia.choporova@inp.nsk.su
5Image Processing Systems Institute, Russian Academy of Sciences, ul. Molodogvardeiskaya 151, Samara, 443001 Russia
nano@ssau.ru";s:4:"TYPE";s:4:"html";}
Keywords: DOE, terahertz radiation
Subsection: PHYSICAL AND TECHNICAL PRINCIPLES OF MICRO- AND OPTOELECTRONICS
Abstract
This paper presents a fabrication technique and results of studies of silicon binary diffractive optical elements (DOEs): a diffractive lens and a 1 : 2 diffractive beam splitter with an aperture diameter of 30 mm for the terahertz spectral range. The elements were fabricated in two versions: with and without an antireflection coating of parylene C. The DOE characteristics were investigated in the beam of the Novosibirsk free electron laser at a wavelength of 141 µm. The results are given of a study of the radiation resistance of the coating, which remained intact upon exposure to an average radiation power density of 4 kW/cm2; the peak power in a 100 ps pulse was almost 8 MW/cm2. Experimental estimates of the diffraction efficiency of the elements coated with the antireflection coating are in good agreement with theoretical estimates.
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